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Low-frequency admittance of quantized Hall conductors

机译:量子化霍尔导体的低频导纳

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摘要

We present a current and charge conserving theory for the low frequencyadmittance of a two-dimensional electron gas connected to ideal metalliccontacts and subject to a quantizing magnetic field. In the framework of theedge-channel picture, we calculate the admittance up to first order withrespect to frequency. The transport coefficients in first order with respect tofrequency, which are called emittances, determine the charge emitted into acontact of the sample or a gate in response to an oscillating voltage appliedto a contact of the sample or a nearby gate. The emittances depend on thepotential distribution inside the sample which is established in response tothe oscillation of the potential at a contact. We show that the emittances canbe related to the elements of an electro-chemical capacitance matrix whichdescribes a (fictitious) geometry in which each edge channel is coupled to itsown reservoir. The particular relation of the emittance matrix to thiselectro-chemical capacitance matrix depends strongly on the topology of theedge channels: We show that edge channels which connect different reservoirscontribute with a negative capacitance to the emittance. For example, while theemittance of a two-terminal Corbino disc is a capacitance, the emittance of atwo-terminal quantum Hall bar is a negative capacitance. The geometry of theedge-channel arrangement in a many-terminal setup is reflected by symmetryproperties of the emittance matrix. We investigate the effect of voltage probesand calculate the longitudinal and the Hall resistances of an idealfour-terminal Hall bar for low frequencies.
机译:我们提出了一种二维电子气的低频导纳的电流和电荷守恒理论,该二维电子气连接到理想的金属触点并受到量化磁场的影响。在边缘通道图像的框架中,我们针对频率计算导纳至一阶。相对于频率的一阶传输系数,称为发射率,响应于施加到样品或附近栅极的触点上的振荡电压确定发射到样品或栅极的触点中的电荷。发射率取决于样品内部的电位分布,该电位分布是响应于接触处的电位振荡而建立的。我们表明,发射率可能与描述一个(虚拟)几何结构的电化学电容矩阵的元素有关,其中每个边缘通道都耦合到它自己的容器。发射率矩阵与此电化学电容矩阵的特定关系在很大程度上取决于边缘通道的拓扑:我们显示连接不同储层的边缘通道对发射率的贡献为负。例如,当两个末端的Corbino圆盘的发射率是一个电容时,两个末端的量子霍尔棒的发射率是一个负电容。发射矩阵矩阵的对称性反映了多通道设置中边缘通道布置的几何形状。我们研究了电压探头的影响,并计算了低频理想四端霍尔棒的纵向和霍尔电阻。

著录项

  • 作者

    Christen, T.; Buttiker, M.;

  • 作者单位
  • 年度 1996
  • 总页数
  • 原文格式 PDF
  • 正文语种 {"code":"en","name":"English","id":9}
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